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Computer Aided Engineering of Semi-conductor Integrated Circuits (1977)

Defense Technical Information Center · leaf 303

An illustration from Computer Aided Engineering of Semi-conductor Integrated Circuits, 1977, leaf 303
31 Calculation of Oxygon I'ocoil Distribution in SiO^: Method 1. Fig. 1 •]2 Production of an energetic oxygen recoil. As IMPLANT 5xl0’^ (OOkoV … Fig. 1-13 Oxygen recoil implantation. The vertical axis shovfs the total dose of recoil implanted OAvqen atoms as a functinn of oxide thickness. Exporincntal data is from Goeteberger et al [10]. The curves labeled method 1 and method 2 are calculated by techniques explained in the text.

Kennedy, David P · Florida univ gainesville electron device research center · Computer aided design · Integrated circuits · Solid state electronics · Computer programs · Cost effectiveness · Field effect transistors · Mathematical models · Metal oxide semiconductors · Model theory · Semiconductor devices

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