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Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)

Defense Technical Information Center · leaf 210

An illustration from Computer-Aided Engineering of Semiconductor Integrated Circuits, 1979, leaf 210
Fig. 3.4. Circuit representation of the mass-balance of AsH3 just above the gas-solid Interface [Eqs. (2), (18), (34)]. The capacitor Incorpor¬ ates time-varying effects related to the accumulation of AsH 3. … Fig. 3.5. Equivalent circuit representing the total doping process. Each node corre¬ sponds to one point In the dopant system, and^lt Is associated with one As-containing species (c.f. Fig. 3); (X)^ is the arsine molar fraction corresponding to the As-containing species associated with the 1th…

Meindl, J D · Stanford univ ca integrated circuits lab · Computer aided design · Integrated circuits · Semiconductor devices · Computer applications · Doping · Engineering · Fabrication · Ion implantation · Low costs · Measurement · Military applications · Oxidation · Physical properties · Silicon · Thermal properties · Vapor deposition

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