Computer Aided Engineering of Semi-conductor Integrated Circuits (1977)
Defense Technical Information Center · leaf 284
13 Figure 1.4 shows the results of a calculation performed with the same set of £arameter£ for a 10 ions/cm^ dose; which produces an order-of-magnitude increase in the impurity and damage concentrations. The results depicted are analogous to the previous example except for some loss in the quality… … Fig. 1:4 10^5 ions/cm2 Dose Implant - Evolution of calculated active boron profiles at 1 , 3, 10, 35 min. in a 900°C isothermal- anneal and comparison of the calculated Total Boron concen- tration Profile with the experimental S.I.M.S. Profile by Hofker at 35 min.
Kennedy, David P · Florida univ gainesville electron device research center · Computer aided design · Integrated circuits · Solid state electronics · Computer programs · Cost effectiveness · Field effect transistors · Mathematical models · Metal oxide semiconductors · Model theory · Semiconductor devices
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