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Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)

Defense Technical Information Center · leaf 221

An illustration from Computer-Aided Engineering of Semiconductor Integrated Circuits, 1979, leaf 221
(cm'3) Fig. 3.18. Hall mobility of phosphorus-implanted, low-pressure and atmospheric- pressure films as functions of the average dopant concentration. The electron mobility In n-type, single-crystal silicon Is shown for 17 2 comparison. At a dopant concentration of 6.5 x 10 /cm the 2 mobility In…

Meindl, J D · Stanford univ ca integrated circuits lab · Computer aided design · Integrated circuits · Semiconductor devices · Computer applications · Doping · Engineering · Fabrication · Ion implantation · Low costs · Measurement · Military applications · Oxidation · Physical properties · Silicon · Thermal properties · Vapor deposition

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