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Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)

Defense Technical Information Center · leaf 223

An illustration from Computer-Aided Engineering of Semiconductor Integrated Circuits, 1979, leaf 223
Fig. 3.20. Model of n-type polycrystalllne material showing (a) small crystallites surrounded by grain boundaries containing large numbers of traps, (b) resulting space charge, and (c) corresponding energy-band diagram with potential barriers surrounding the grain boundaries. 217

Meindl, J D · Stanford univ ca integrated circuits lab · Computer aided design · Integrated circuits · Semiconductor devices · Computer applications · Doping · Engineering · Fabrication · Ion implantation · Low costs · Measurement · Military applications · Oxidation · Physical properties · Silicon · Thermal properties · Vapor deposition

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