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Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)

Defense Technical Information Center · leaf 357

An illustration from Computer-Aided Engineering of Semiconductor Integrated Circuits, 1979, leaf 357
Relatlve Number Grfd of Nodes Required a) a2 ■ 100 (all fine) 2 bj .la + .9 a 0 * 19 c) .02 a2 + .26 a8 .72 B? 5.3 d) .3 aB+ .7 g2 ■ 3.7 e) .1 a8 + .9 62- 1.9 f) .04 a6+ .91 62*- 1.8 1 (all coarse Figure 4.5.31 Relative efficiencies of the grids of Figure 4.5.30.

Meindl, J D · Stanford univ ca integrated circuits lab · Computer aided design · Integrated circuits · Semiconductor devices · Computer applications · Doping · Engineering · Fabrication · Ion implantation · Low costs · Measurement · Military applications · Oxidation · Physical properties · Silicon · Thermal properties · Vapor deposition

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