Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)
Defense Technical Information Center · leaf 373
Fig. 4. 6. 34. (a)n-channel MOSFET with nonuniform doping across the width of the channel (x-direction) . (b)surface impurity concentration in x-direction. (c)Threchold VT in x- direction. * U … Fig. 4.6.35. MOS structure for current calculations for coses A, ft and C. A x 10^ Cm-3 N ■;ub G70 A t ox W ■ 20 un 3 2 x U)1CCm'3 N l»t ak 367
