Analysis of the Capability to Effectively Design Complementary Metal Oxide Semiconductor Integrated Circuits (1984)
Defense Technical Information Center · leaf 21
constructed using a p-well simply because it was the rust method . All three are claimed to have advantages in enhancing the performance of a CMOS circuit. For the first method, bulk CMOS starts with an ri-type substrate into which a p-well is diffused. This well eventually holds the NMOS ci rcui t…
McConkey,M L · Air force inst of tech wright-patterson afb oh school of engineering · Integrated circuits · Metal oxide semiconductors · Simulation · Computer aided design · Theses · Gates(circuits) · Cycles · Bulk materials · Viability · Logic circuits · Logic devices · Flow charting · Circuits · Libraries · Complementary metal oxide semiconductors · Arithmetic units
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