Computer Aided Engineering of Semi-conductor Integrated Circuits (1977)
Defense Technical Information Center · leaf 227
SOURCE OXIDES DRAIN p- SUBSTRATE ^ CHANNEL LENGTH ^CHANNEL … ia) Cross-secticr. of an n-channel MOSFET. (b) Sectancrular region mcdeied. The abrupt nietallur junctions between source-substrate and drain- subsrrate are regarded as planar and at the lett and right borders of the reaion ncdeled.
Kennedy, David P · Florida univ gainesville electron device research center · Computer aided design · Integrated circuits · Solid state electronics · Computer programs · Cost effectiveness · Field effect transistors · Mathematical models · Metal oxide semiconductors · Model theory · Semiconductor devices
Internet Archive · Defense Technical Information Center · Public domain (US government work). Free to use for anything.
