Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)
Defense Technical Information Center · leaf 299
*n>.i*U«9 3mSi 1Y4X" … 013TMCC <IUCINK3> Equlpotentlal contours before the onset of punch through. Figure 4.3.9a The approximate location of the developing bulk channel Is shown. Equlpotentlal contours after the onset of punch through. The 4.3.9b location of the bulk channel Is shown. 4.3.9c Potential along the bulk…