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Computer-Aided Engineering of Semiconductor Integrated Circuits (1979)

Defense Technical Information Center · leaf 376

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H4 M.« OlSIfiiJCE ( MICRONS ) Fig.4.6.38 Inversion Carrier concentration at several gate potentials calculated by a numerical two-dimensional device simulation program. … Fig. 4.6.391*0 successive approximations for the channel nobility across the device width, »' j C * ) -

Meindl, J D · Stanford univ ca integrated circuits lab · Computer aided design · Integrated circuits · Semiconductor devices · Computer applications · Doping · Engineering · Fabrication · Ion implantation · Low costs · Measurement · Military applications · Oxidation · Physical properties · Silicon · Thermal properties · Vapor deposition

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